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For this purpose, the density of SiF4 has been measured time-resolved using quantum cascade laser absorption spectroscopy (QCLAS). To correlate the temporal development of the SiF4 density with the ULK damage, Variable Angle Spectroscopic Ellipsometry (VASE) and X-ray photoelectron spectroscopy (XPS) were performed on the treated ULK samples. The dataset corresponds to the findings published under the title \u201cOn the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes\u201d with open access in AIP Advances 2020.\u003C\/p\u003E\n","url":"https:\/\/www.inptdat.de\/dataset\/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-processes","state":"Active","log_message":"Update to resource On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 6 (F\/C = 4)","private":true,"revision_timestamp":"Fri, 06\/11\/2021 - 12:36","metadata_created":"Thu, 05\/14\/2020 - 10:03","metadata_modified":"Fri, 06\/11\/2021 - 12:36","creator_user_id":"0e27023c-5517-4b3f-b96e-c939dc6a74ff","type":"Dataset","resources":[{"id":"80eeda58-b66c-4bb5-9fc0-bd48d5b87d4f","revision_id":"","url":"https:\/\/www.inptdat.de\/system\/files\/node194_Fig3_1.csv","description":"\u003Cp\u003ETime resolved SiF4 density during an ULK etch process measured with QCLAS at process conditions of 100 mTorr total pressure, 600 W RF power and a F\/C ratio of the precursor gas of 3.25. 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