Magnetic enhanced reactive ion etch (MERIE) chamber of a Centura 5200 cluster system (Applied Materials): radio frequency (RF) excitation at 13.56 MHz, RF power 600 W.
\n", "procedure": "Chamber wall temperature as well as substrate temperature is set to 288 K.
\n" }, "medium": { "name": "CF4, CHF3, Ar", "properties": "Gas mixtures of CF4, CHF3 and Ar at constant total flow of 100 sccm and constant total pressure of 100 mTorr.
\n" }, "target": { "name": "Si wafer, SiOCH", "properties": "Cutted pieces of 10 times 10 cm from a 300 mm wafer with 500 nm thick porous SiOCH layer (dielectric constant = 2.4) deposited on Si via PECVD. ", "procedure": "Each peace is placed on an Al wafer with 200 mm diameter to be handled in the Centura cluster system." }, "diagnostics": { "name": "QCLAS, VASE, XPS", "properties": "Quantum cascade laser absorption spectroscopy (QCLAS): Q-MACS process fiber system from neoplas control, effective absorption length 5.4 m (12 passes), time resolution 1 Hz.
\nVariable angle spectroscopic ellipsometry (VASE): SE850 system from Sentech, incident angles 50\u00b0, 60\u00b0, and 70\u00b0, wavelength range 400-850 nm.
\nX-ray photoelectron spectroscopy (XPS): R3000 electron energy analyzer from VG Scienta, pass energy 200 eV, monochromatic Al-K\u03b1 radiation from a MX 650 X-ray source from VG Scienta.
\n", "procedure": "In situ and time-resolved determination of SiF4 concentration by QCLAS:
\nEnhancement of sensitivity due to a mulitpass optics (neoplas control) implemented at the chamber increasing the effective absorption length to 5.4 m by setting 12 passes. Time resolution was set to 1 Hz. The absorption of SiF4 was detected in the range between 1030.90 cm-1 and 1031.00 cm-1.
Ex situ determination of layer thicknesses and refractive Indices by VASE:
\nEach sample was measured at three incident angles (50\u00b0, 60\u00b0, and 70\u00b0) in the wavelength range between 400 nm and 850 nm. For the analysis, the partially etched SiOCH layer was modelled with three layers consisting of 6 parameters, i.e. refractive index and film thickness for the polymer film, for the damaged SiOCH film, and for the non-damaged SiOCH film, respectively.
Ex situ analysis of elemental composition of plasma treated surfaces by XPS:
\nTo compensate for charging of the isolated samples, an electron flood gun was applied during the XPS measurement such that the Si 2p peak was shifted to 103.5 eV binding energy corresponding to SiO2. For the analysis of the XPS spectra, CasaXPS Version 2.3.16 Pre-rel 1.4 was applied using Scofield relative sensitivity factors in combination with a Shirley background. A numerical approximation for a Voigt profile (Lorentz 30% share) was used as a line shape model to determine the respective peaks of the deconvolution. The full width at half maximum has been limited to 1.5 \u2212 3.0 eV for the deconvolution.