On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processesThe temporal behavior of the molecular etching product SiF4 in fluorocarbon-based plasmas used for the dry etching of ultra low-k (ULK) materials has been brought into connection with the polymer deposition on the surface during plasma treatment within the scope of this work. For this purpose, the density of SiF4 has been measured time-resolved using quantum cascade laser absorption spectroscopy (QCLAS). To correlate the temporal development of the SiF4 density with the ULK damage, Variable Angle Spectroscopic Ellipsometry (VASE) and X-ray photoelectron spectroscopy (XPS) were performed on the treated ULK samples. The dataset corresponds to the findings published under the title “On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes” with open access in AIP Advances 2020.

]]>absorption spectroscopyellipsometryinfrared laserultra low-k etchingXPSMaterials / Surfaces, Plasma Chemical Processes87c54eb6-1526-4952-95ce-2188736f976a2020-05-14T10:03:31+02:002021-06-11T12:36:49+02:00enFhI ENAS, INPOn the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 3Time resolved SiF4 density during an ULK etch process measured with QCLAS at process conditions of 100 mTorr total pressure, 600 W RF power and a F/C ratio of the precursor gas of 3.25. The plasma process is started at t = t0 – see Fig. 3 in the publication.

]]>2020-05-14T10:03:45+02:002020-06-02T15:42:12+02:00text/csvcsv1138https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-0On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 4 (Ar = 0 sccm)Comparison of normalized etching rate and mean SiF4 densities as a function of the F/C ratio for Ar gas flow rate of 0 sccm. The linearity proves a strong correlation between etch product density and etching rate – see Fig. 4 in the publication.

]]>2020-05-25T11:18:33+02:002020-06-02T15:42:38+02:00text/csvcsv171https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-1On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 4 (Ar = 25 sccm)Comparison of normalized etching rate and mean SiF4 densities as a function of the F/C ratio for Ar gas flow rate of 25 sccm. The linearity proves a strong correlation between etch product density and etching rate – see Fig. 4 in the publication.

]]>2020-05-25T11:22:23+02:002020-06-02T15:43:45+02:00text/csvcsv145https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-2On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 4 (Ar = 50 sccm)Comparison of normalized etching rate and mean SiF4 densities as a function of the F/C ratio for Ar gas flow rate of 50 sccm. The linearity proves a strong correlation between etch product density and etching rate – see Fig. 4 in the publication.

]]>2020-05-25T11:24:44+02:002021-06-11T12:36:53+02:00text/csvcsv115https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-3On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 4 (Ar = 75 sccm)Comparison of normalized etching rate and mean SiF4 densities as a function of the F/C ratio for Ar gas flow rate of 75 sccm. The linearity proves a strong correlation between etch product density and etching rate – see Fig. 4 in the publication.

]]>2020-05-25T11:26:45+02:002020-06-02T15:44:13+02:00text/csvcsv92https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-4On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 5Ex situ determined etching rate in dependence on the in situ measured concentration of SiF4 averaged over the entire process – see Fig. 5 in the publication.

]]>2020-05-25T11:28:10+02:002020-06-02T15:44:28+02:00text/csvcsv444https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-5On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 6 (F/C = 3)Time-resolved SiF4 density at F/C = 3 – see Fig. 6 in the publication.

]]>2020-05-25T11:36:55+02:002020-06-02T15:45:27+02:00text/csvcsv1130https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-9On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 6 (F/C = 3.25)Time-resolved SiF4 density at F/C = 3.25 – see Fig. 6 in the publication.

]]>2020-05-25T11:34:08+02:002020-06-02T15:44:57+02:00text/csvcsv1387https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-7On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 6 (F/C = 3.5) Time-resolved SiF4 density at F/C = 3.5 – see Fig. 6 in the publication.

]]>2020-05-25T11:31:49+02:002020-06-02T15:44:41+02:00text/csvcsv1282https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-6On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 6 (F/C = 3.75)Time-resolved SiF4 density at F/C = 3.75 – see Fig. 6 in the publication.

]]>2020-05-25T11:35:32+02:002020-06-02T15:45:10+02:00text/csvcsv1177https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-8On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 6 (F/C = 4)Time-resolved SiF4 density at F/C = 4 – see Fig. 6 in the publication.

]]>2020-05-25T11:38:21+02:002021-06-11T12:36:49+02:00text/csvcsv1340https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-10On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 7 (Ar = 0 sccm)Exponential time constant c as a function of the F/C ratio for Ar gas flow rate of 0 sccm – see Fig. 7 in the publication.

]]>2020-05-25T11:39:37+02:002020-06-02T15:45:52+02:00text/csvcsv83https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-11On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 7 (Ar = 25 sccm)Exponential time constant c as a function of the F/C ratio for Ar gas flow rate of 25 sccm – see Fig. 7 in the publication.

]]>2020-05-25T11:41:28+02:002020-06-02T15:46:13+02:00text/csvcsv71https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-12On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 7 (Ar = 50 sccm)Exponential time constant c as a function of the F/C ratio for Ar gas flow rate of 50 sccm – see Fig. 7 in the publication.

]]>2020-05-25T11:42:36+02:002020-06-02T15:46:29+02:00text/csvcsv59https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-13On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 7 (Ar = 75 sccm)Exponential time constant c as a function of the F/C ratio for Ar gas flow rate of 75 sccm – see Fig. 7 in the publication.

]]>2020-05-25T11:43:33+02:002020-06-02T15:46:47+02:00text/csvcsv47https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-14On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 8 (Ar = 0 sccm)Effect of different process gas mixtures on the polymer thickness, the damage depth and the refractive index, respectively for Ar gas flow rate of 0 sccm – see Fig. 8 in the publication.

]]>2020-05-25T11:44:55+02:002021-06-11T12:36:49+02:00text/csvcsv272https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-15On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 8 (Ar = 25 sccm)Effect of different process gas mixtures on the polymer thickness, the damage depth and the refractive index, respectively for Ar gas flow rate of 25 sccm – see Fig. 8 in the publication.

]]>2020-05-25T11:49:02+02:002020-06-02T15:47:21+02:00text/csvcsv239https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-16On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 8 (Ar = 50 sccm)Effect of different process gas mixtures on the polymer thickness, the damage depth and the refractive index, respectively for Ar gas flow rate of 50 sccm – see Fig. 8 in the publication.

]]>2020-05-25T11:50:22+02:002020-06-02T15:47:39+02:00text/csvcsv211https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-17On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 8 (Ar = 75 sccm)Effect of different process gas mixtures on the polymer thickness, the damage depth and the refractive index, respectively for Ar gas flow rate of 75 sccm – see Fig. 8 in the publication.

]]>2020-05-25T11:51:15+02:002020-06-02T15:47:57+02:00text/csvcsv182https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-18On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 9 (Ar = 0 sccm)Surface composition of partially etched SiOCH films for different F/C ratios and Ar gas flow rate of 0 sccm – see Fig. 9 in the publication.

]]>2020-05-25T11:52:44+02:002020-06-02T15:48:14+02:00text/csvcsv200https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-19On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 9 (Ar = 25 sccm)Surface composition of partially etched SiOCH films for different F/C ratios and Ar gas flow rate of 25 sccm – see Fig. 9 in the publication.

]]>2020-05-25T11:54:11+02:002020-06-02T15:48:29+02:00text/csvcsv171https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-20On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 9 (Ar = 50 sccm)Surface composition of partially etched SiOCH films for different F/C ratios and Ar gas flow rate of 50 sccm – see Fig. 9 in the publication.

]]>2020-05-25T11:55:11+02:002020-06-02T15:48:42+02:00text/csvcsv140https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-21On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 9 (Ar = 75 sccm)Surface composition of partially etched SiOCH films for different F/C ratios and Ar gas flow rate of 75 sccm – see Fig. 9 in the publication.

]]>2020-05-25T11:56:14+02:002020-06-02T15:48:57+02:00text/csvcsv111https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-22On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 10Amount of oxygen at the surface and thickness of the CF polymer film as a function of carbon content at the surface of the partially etched SiOCH – see Fig. 10 in the publication.

]]>2020-05-25T11:58:43+02:002020-06-02T15:49:12+02:00text/csvcsv272https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-23On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 11 (Ar = 0 sccm)Bonds on partially etched SiOCH surfaces for different F/C ratios and Ar gas flow rate of 0 sccm – see Fig. 11 in the publication.

]]>2020-05-25T12:00:11+02:002021-06-11T12:36:53+02:00text/csvcsv273https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-24On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 11 (Ar = 25 sccm)Bonds on partially etched SiOCH surfaces for different F/C ratios and Ar gas flow rate of 25 sccm – see Fig. 11 in the publication.

]]>2020-05-25T12:09:52+02:002020-06-02T15:49:51+02:00text/csvcsv235https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-25On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 11 (Ar = 50 sccm)Bonds on partially etched SiOCH surfaces for different F/C ratios and Ar gas flow rate of 50 sccm – see Fig. 11 in the publication.

]]>2020-05-25T12:10:57+02:002020-06-02T15:50:06+02:00text/csvcsv196https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-26On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 11 (Ar = 75 sccm)Bonds on partially etched SiOCH surfaces for different F/C ratios and Ar gas flow rate of 75 sccm – see Fig. 11 in the publication.

]]>2020-05-25T12:11:54+02:002020-06-02T15:50:19+02:00text/csvcsv157https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-27On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 12Correlation coefficient (Pearson) between results of XPS analysis (surface components, surface bonds) and results of QCLAS (etching rate, time constant) and VASE (polymer thickness, damage depth) – see Fig. 12 in the publication.

]]>2020-05-25T12:15:30+02:002020-06-02T15:50:35+02:00text/csvcsv389https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-28On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 13Damage depth of partially etched SiOCH and thickness of CF polymer film as a function of the time constant c describing the temporal behaviour of the density of SiF4 during the etching process – see Fig. 13 in the publication.

]]>2020-05-25T12:17:02+02:002020-06-02T15:50:47+02:00text/csvcsv314https://www.inptdat.de/dataset/relationship-between-sif4-plasma-species-and-sample-properties-ultra-low-k-etching-29DKANhttps://www.inptdat.de