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On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 7 (Ar = 25 sccm)

Exponential time constant c as a function of the F/C ratio for Ar gas flow rate of 25 sccm – see Fig. 7 in the publication.

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FieldValue
mimetypetext/csv
filesize71 bytes
resource typefile upload
timestampMay 25, 2020
Resource filetype csv
Resource datatype data table
Resource range Total pressure: 100 mTorr; RF power: 600 W; Ar gas flow rate: 25 sccm
Resource quality published