On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 13

Damage depth of partially etched SiOCH and thickness of CF polymer film as a function of the time constant c describing the temporal behaviour of the density of SiF4 during the etching process – see Fig. 13 in the publication.

node194_Fig13.csv

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Field	Value
mimetype	text/csv
filesize	314 bytes
resource type	file upload
timestamp	May 25, 2020

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Value

mimetype

text/csv

filesize

314 bytes

resource type

file upload

timestamp

May 25, 2020

Resource filetype	csv
Resource datatype	data table
Resource range	Total pressure: 100 mTorr; RF power: 600 W
Resource quality	published

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On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 13

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