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On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 10

Amount of oxygen at the surface and thickness of the CF polymer film as a function of carbon content at the surface of the partially etched SiOCH – see Fig. 10 in the publication.

node194_Fig10.csv
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FieldValue
mimetypetext/csv
filesize272 bytes
resource typefile upload
timestampMay 25, 2020
Resource filetype csv
Resource datatype data table
Resource range Total pressure: 100 mTorr; RF power: 600 W
Resource quality published