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On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 6 (F/C = 3.5)

Time-resolved SiF4 density at F/C = 3.5 – see Fig. 6 in the publication.

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FieldValue
mimetypetext/csv
filesize1.25 KB
resource typefile upload
timestampMay 25, 2020
Resource filetype csv
Resource datatype data table
Resource range Total pressure: 100 mTorr; RF power: 600 W; Ar gas flow rate: 0 sccm; F/C = 3.5
Resource quality published