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On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 11 (Ar = 75 sccm)

Bonds on partially etched SiOCH surfaces for different F/C ratios and Ar gas flow rate of 75 sccm – see Fig. 11 in the publication.

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FieldValue
mimetypetext/csv
filesize157 bytes
resource typefile upload
timestampMay 25, 2020
Resource filetype csv
Resource datatype data table
Resource range Total pressure: 100 mTorr; RF power: 600 W; Ar gas flow rate: 75 sccm
Resource quality published